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Abstract: Graphene is a two-dimensional material composed of carbon atoms in a honeycomb lattice with an atom at each vertex. It is a perfect semimetal with a linear dispersion relationship around the points where the conducting band and valance band touch. This means that the charge carriers behave in a relativistic manner around these Dirac points giving graphene unprecedented mobility. Another unique characteristic of graphene is that it is predicted to have long spin relaxation times which makes it a promising contender for spintronic devices. This prediction has yet to be experimentally observed making it's implementation into this industry slow-going. This project approaches the problem of characterizing the spin relaxation time in two parts. The first part focuses on designing a setup to safely connect to and study graphene field effect transistors (GFETs). With this setup, we were able to successfully characterize the resistance of these devices as well as calculate the mobility and charge carrier density through a Hall voltage experiment. The second part focuses on using this setup to replicate an electrically detected magnetic resonance (EDMR) experiment to determine the g-factor and spin relaxation time. The main contribution of this project is based in designing this setup to lay the groundwork for future studies and analysis of the spin dynamics in graphene.

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